Excellent imagery obtained using a 1-point correction alludes to the array’s uniform responsivity. s −1 and temperature sensitivity of 9 mK with F∕2.3 optics.The total noise was dominated by the photon flux and read-out circuit which gave the imager a noise equivalent input of ∼5 × 10 10 ph These low-light conditions, and consequently the use of a 13.5 ms integration time, the imager was observed to be BLIP thanks to a ∼5 pA dark current from the 27 μm wide pixels. The 280 K blackbody’s photon irradiance was limited by an aperture and a band-pass filter from 3.6 μm to 3.8 μm resulting in a total flux of ∼5 × 10 12 ph

We report a type-II superlattice mid-wave infrared 320 × 256 imager at 81 K with the M-barrier design that achieved background limited performance (BLIP) and ∼99%operability. Low irradiance background limited type-II superlattice MWIR M-barrier imagerĮ.K. Wide tuning based on dual section sample grating DFB QCLs has resulted in individual tuning of 50cm-1 and 24 dB side mode suppression ratio with continuous wave power greater than 100 mW. 2.4W RT, CW power output has been achieved from a distributed feedback (DFB) QCL. Very high peak power of 190 W has been obtained from a broad area QCL of ridge width 400μm. Operation wavelength of QCL in CW at RT has been extended to as short as 3μm. A record high WPE of 53% at 40K has been demonstrated. CW output power of 5.1 W with 21% WPE has been achieved at room temperature (RT). Recent research in mid-IR QCLs has resulted in record high wallplug efficiency (WPE), high continuous wave (CW) output power, single mode operation and wide tunability. Quantum cascade laser (QCL) is an important source of electromagnetic radiation in mid infrared region. Manijeh Razeghi Neelanjan Bandyopadhyay Yanbo Bai Quanyong Lu Steven Slivken Recent advances in mid infrared (3-5 μm) quantum cascade lasers

Detailed high resolution transmission electron microscopy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5at% in the active layers. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. P-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry Journal of Crystal Growth, Volume 435, Pages 105-109- Novem. Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

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